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Silicon nanowhiskers grown on a hydrogen-terminated silicon {111} surface

 

作者: N. Ozaki,   Y. Ohno,   S. Takeda,  

 

期刊: Applied Physics Letters  (AIP Available online 1998)
卷期: Volume 73, issue 25  

页码: 3700-3702

 

ISSN:0003-6951

 

年代: 1998

 

DOI:10.1063/1.122868

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Using a hydrogen-terminated Si {111} surface as a substrate, we have grown Si nanowhiskers along the ⟨112⟩ direction by the vapor–liquid–solid mechanism. The minimum silicon core diameter was 3 nm and the maximum length was about 2 &mgr;m. The minimum silicon core diameter is close to the critical value for visible light emission due to the quantum confinement effect. In contrast to an oxidized Si surface, the hydrogen-terminated surface facilitates the formation of small molten Au–Si catalysts at a lower temperature (500&hthinsp;°C) which is slightly above the eutectic temperature. The formation of catalysts and the subsequent growth at the low temperature yield thin Si nanowhiskers on a Si substrate. ©1998 American Institute of Physics.

 

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