Silicon nanowhiskers grown on a hydrogen-terminated silicon {111} surface
作者:
N. Ozaki,
Y. Ohno,
S. Takeda,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 73,
issue 25
页码: 3700-3702
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.122868
出版商: AIP
数据来源: AIP
摘要:
Using a hydrogen-terminated Si {111} surface as a substrate, we have grown Si nanowhiskers along the 〈112〉 direction by the vapor–liquid–solid mechanism. The minimum silicon core diameter was 3 nm and the maximum length was about 2 &mgr;m. The minimum silicon core diameter is close to the critical value for visible light emission due to the quantum confinement effect. In contrast to an oxidized Si surface, the hydrogen-terminated surface facilitates the formation of small molten Au–Si catalysts at a lower temperature (500&hthinsp;°C) which is slightly above the eutectic temperature. The formation of catalysts and the subsequent growth at the low temperature yield thin Si nanowhiskers on a Si substrate. ©1998 American Institute of Physics.
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