The electrical properties of stacking faults and precipitates in heat‐treated dislocation‐free Czochralski silicon
作者:
L. C. Kimerling,
H. J. Leamy,
J. R. Patel,
期刊:
Applied Physics Letters
(AIP Available online 1977)
卷期:
Volume 30,
issue 5
页码: 217-219
ISSN:0003-6951
年代: 1977
DOI:10.1063/1.89355
出版商: AIP
数据来源: AIP
摘要:
We have studied the electrical properties of dislocations, stacking faults, and precipitates produced during 1200 °C aging of crucible‐grown silicon. The defects were examined by SEM in the charge collection mode, at temperatures from 77 to 300 °K. Undecorated Frank extrinsic stacking faults exhibit defect energy levels in the upper half of the gap (∼Ec−0.1 eV). The partial dislocations bounding these faults possess energy levels lower thanEc−0.3 eV. Finally, precipitates are observed to act as microplasma sites at low (T<300 °K) temperatures.
点击下载:
PDF
(214KB)
返 回