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Fabrication and properties of Nb/Al, Alox/Nb Josephson tunnel junctions with a double‐oxide barrier

 

作者: E. P. Houwman,   D. Veldhuis,   J. Flokstra,   H. Rogalla,  

 

期刊: Journal of Applied Physics  （AIP Available online 1990）
卷期: Volume 67, issue 4  

页码: 1992-1994

 

ISSN:0021-8979

 

年代: 1990

 

DOI:10.1063/1.345579

 

出版商: AIP

 

数据来源: AIP

 

摘要:

High‐quality Nb/Al, Alox/Nb Josephson tunnel junctions using double‐oxide layers as barriers have been fabricated. The critical current density is controlled by the thickness of the second Al layer. This layer has to be oxidized completely through in order to obtain high‐quality junctions. Typically, gap voltages of 2.8–3.0 mV andVmup to 70 mV at 4.2 K were obtained.

 

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