首页   按字顺浏览 期刊浏览 卷期浏览 Summary Abstract: Molecular‐beam epitaxial growth of high‐quality In0.52Al0.48As and I...
Summary Abstract: Molecular‐beam epitaxial growth of high‐quality In0.52Al0.48As and In1−x−yGaxAlyAs

 

作者: Albert Chin,   Pallab Bhattacharya,   Won‐Pyo Hong,   Wei‐Qi Li,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  (AIP Available online 1988)
卷期: Volume 6, issue 2  

页码: 665-667

 

ISSN:0734-211X

 

年代: 1988

 

DOI:10.1116/1.584384

 

出版商: American Vacuum Society

 

关键词: (Al,In)As;(Ga,In)As

 

数据来源: AIP

 

 

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