Profiles of S+and S+2ions implanted at 60 and 120 keV were studied using Auger electron spectroscopy. The maximum sulfur concentration of unannealed samples was found to be 86 nm below the GaAs surface for the 120‐keV S+with a total dose of 2×1016cm−2, whereas it was 40 nm for the 120‐keV S+2with a dose of 1016cm−2. These depths compare favorably with the calculated LSS ranges of 89 and 45 nm, respectively. Outdiffusion of sulfur has been observed in sulfur‐implanted Cr‐doped GaAs following annealing. The absolute sulfur concentrations were obtained by comparing the relative heights of Auger peaks between the implanted sulfur and the sulfur in ZnS and CdS crystals. Limits of detectability for the implanted sulfur were measured to be ∼1019cm−3.