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Blue/green ZnSe–ZnCdSe light‐emitting diodes and photopumped laser structures grown by molecular beam epitaxy on ZnSe substrates

 

作者: J. Ren,   D. B. Eason,   Z. Yu,   B. Sneed,   J. W. Cook,   J. F. Schetzina,   N. A. El‐Masry,   X. H. Yang,   J. J. Song,   Gene Cantwell,   William C. Harsh,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1994）
卷期: Volume 12, issue 2  

页码: 1262-1265

 

ISSN:1071-1023

 

年代: 1994

 

DOI:10.1116/1.587017

 

出版商: American Vacuum Society

 

关键词: LIGHT EMITTING DIODES;SEMICONDUCTOR LASERS;MOLECULAR BEAM EPITAXY;VISIBLE RADIATION;ELECTROLUMINESCENCE;OPTICAL PUMPING;TERNARY COMPOUNDS;ZINC SELENIDES;CADMIUM SELENIDES;TEMPERATURE RANGE 0−13 K;TEMPERATURE RANGE 13−65 K;HETEROSTRUCTURES;ZnSe;(Zn,Cd)Se

 

数据来源: AIP

 

摘要:

The first ZnSe–ZnCdSe double‐heterostructure light‐emitting diodes (LEDs) and photopumped laser structures on ZnSe substrates have been successfully grown by molecular beam epitaxy. The LEDs emit bright blue/green electroluminescence at room temperature, with the emission peak centered at 492 nm. Photopumped laser emission was also observed from ZnSe–ZnCdSe multiple‐quantum‐well structures grown on ZnSe substrates. The cleaved‐cavity devices display stimulated emission in the deep‐blue spectral region near 477 nm at 10 K and at 478.8 nm at 80 K.  

 

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