The thermal stability of dopant‐hydrogen complexes in hydrogenatedn‐ andp‐type GaAs(1–2×1017cm−3) has been determined by examining their reactivation kinetics in reverse‐biased Schottky diodes. The reactivation process is first‐order for all of the dopants, with thermal dissociation energies (ED) of 1.45±0.10 eV for SiAsacceptors, 1.25±0.05 eV for SiGadonors, 1.20±0.10 eV for SnGadonors, 1.25±0.10 eV for Zn acceptors, 1.35±0.05 eV for CAsacceptors, and 1.15±0.10 eV for Be acceptors. The dissociation frequencies (&ngr;) are thermally activated of the form &ngr;D= &ngr;0E−ED/kT, with the &ngr;0values in the range 1–5×1013s−1. The results are consistent with much of the H being present as H+inp‐type material, and H−inn‐type material.