首页   按字顺浏览 期刊浏览 卷期浏览 Reactive ion etching of AlInGaP and GaAs in SiCl4/CH4/Ar‐based plasmas
Reactive ion etching of AlInGaP and GaAs in SiCl4/CH4/Ar‐based plasmas

 

作者: C. V. J. M. Chang,   J. C. N. Rijpers,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1994）
卷期: Volume 12, issue 2  

页码: 536-539

 

ISSN:1071-1023

 

年代: 1994

 

DOI:10.1116/1.587034

 

出版商: American Vacuum Society

 

关键词: ETCHING;ION BEAMS;ALUMINIUM PHOSPHIDES;INDIUM PHOSPHIDES;GALLIUM PHOSPHIDES;GALLIUM ARSENIDES;BINARY COMPOUNDS;QUATERNARY COMPOUNDS;GAS FLOW;SILICON CARBIDES;METHANE;ARGON;(Al,In,Ga)P;GaAs

 

数据来源: AIP

 

摘要:

The reactive ion etching of AlInGaP and GaAs with a gas mixture of SiCl4, CH4, and Ar is examined. Process parameters such as gas flow composition and radio‐frequency power input are varied. The CH4flow variation in particular has a substantial effect on the morphology of AlInGaP, while generally the effects on GaAs are less dramatic. The etch rates of AlInGaP and GaAs show similar trends. A suitable etching process was found and applied to an AlInGaP/InGaP index‐guided 675 nm laser structure.

 

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