Picosecond photoinduced absorption measurements have been performed on four different (AlxGa1−x)0.5In0.5P fractal quantum well heterostructures. The results of these measurements reveal that, at early times following pulsed excitation, the carriers remain near the surface layer in which they were photogenerated, and populate the higher lying branches of theV‐shaped fractal structure. With increasing time, the carrier population relaxes toward the lowest energy, central wall. The rate at which the relaxation occurs is governed by the characteristic layer of widths of the fractal structure.