Passivation of GaAs surface recombination with organic thiols
作者:
Sharon R. Lunt,
Patrick G. Santangelo,
Nathan S. Lewis,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1991)
卷期:
Volume 9,
issue 4
页码: 2333-2336
ISSN:1071-1023
年代: 1991
DOI:10.1116/1.585743
出版商: American Vacuum Society
关键词: GALLIUM ARSENIDES;SURFACES;THIOLS;PASSIVATION;RECOMBINATION;PHOTOLUMINESCENCE;PHOTOELECTRON SPECTROSCOPY
数据来源: AIP
摘要:
Exposure of GaAs crystals to solutions of organic thiols resulted in substantial reductions in nonradiative GaAs surface recombination rates. This process yielded improvements in steady state photoluminescence signals that were comparable to those obtained after a Na2S⋅9H2O (aqueous) treatment. Use of a series of thiols indicated that the chemically important surface electrical trap levels behaved as a polarizable, electron deficient center. X‐ray photoelectron spectroscopy indicated that the thiols did not remove excess As0nor form detectable levels of As2S3‐like phases, implying that neither of these factors is required for effective surface passivation chemistry.
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