Cu enhanced oxidation of SiGe and SiGeC
作者:
E. J. Jaquez,
A. E. Bair,
T. L. Alford,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 7
页码: 874-876
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.118302
出版商: AIP
数据来源: AIP
摘要:
A study of the effects of C and Ge additions on the Cu catalyzed oxidation of Si has been performed. It was found that the addition of Ge alone resulted in a marked slowdown in the rate of oxygen incorporation; during the first three days of the experiment the rate of oxygen incorporation was 25 times higher in the Si reference sample. The Ge was incorporated into the oxide. Small amounts of C added to the SiGe compound have a more pronounced effect. Carbon concentrations of less than 2&percent; prevent oxidation of SiGeC for periods of at least one month. Copper enhanced oxidation of Si(100) has produced oxides of several hundred nanometers in under one month. ©1997 American Institute of Physics.
点击下载:
PDF
(55KB)
返 回