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On the nature of the defect reverse annealing in ion-implanted silicon

 

作者: A.V. Dvurechensky,   I.A. Ryazantsev,  

 

期刊: Radiation Effects  （Taylor Available online 1980）
卷期: Volume 46, issue 3-4  

页码: 129-132

 

ISSN:0033-7579

 

年代: 1980

 

DOI:10.1080/00337578008209161

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

The reasons resulting in the reverse annealing of the defects in ion-implanted Si layers in 550–650°C temperature range have been studied by EPR technique.

 

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