Growth of Ti‐doped In0.53Ga0.47As using liquid phase epitaxy is reported. The energy position of the Ti4+/Ti3+deep donor level in In0.53Ga0.47Asp‐ndiodes is precisely identified for the first time by deep level transient spectroscopy. The near midgap location of this level atEC−ET=0.37 eV and the potential of InGaAs:Ti of superior thermal stability make it a promising dopant for growing semi‐insulating In0.53Ga0.47As. A recent model suggesting the energy positions of transition metals not to vary across heterojunctions is tested and found to be at least qualitatively valid for this low spin transition metal.