Stable multifilament structures in semiconductor materials based on a kinetic model
作者:
K. Kardell,
Ch. Radehaus,
R. Dohmen,
H.‐G. Purwins,
期刊:
Journal of Applied Physics
(AIP Available online 1988)
卷期:
Volume 64,
issue 11
页码: 6336-6338
ISSN:0021-8979
年代: 1988
DOI:10.1063/1.342095
出版商: AIP
数据来源: AIP
摘要:
A new model for pattern formation in semiconductor materials is proposed based essentially on kinetic processes of charge carriers. This model leads to a set of coupled nonlinear reaction‐diffusion equations with two components: the electron density in the conduction band and the occupation density of a trap level. The model possesses a variety of stable solutions including stable multifilament structures.
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