Plasmon‐phonon‐assisted electron‐hole recombination in silicon at high laser fluence
作者:
Mark Rasolt,
Andrea Marco Malvezzi,
Heinz Kurz,
期刊:
Applied Physics Letters
(AIP Available online 1987)
卷期:
Volume 51,
issue 26
页码: 2208-2210
ISSN:0003-6951
年代: 1987
DOI:10.1063/1.98942
出版商: AIP
数据来源: AIP
摘要:
We present both theoretical and experimental results in silicon which clearly demonstrate that at time scales of 20 to 40 ps, after the pump laser pulse and at fluences greater than 100 mJ/cm2, the carrier density of the electron‐hole plasma drops for increasing fluence; this is not explained by Auger recombination. We show that this drop is specific to plasmon‐phonon‐assisted recombination, which naturally explains this behavior.
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