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Photon‐induced recovery of photoquenched EL2 intracenter absorption in GaAs

 

作者: David W. Fischer,  

 

期刊: Applied Physics Letters  (AIP Available online 1987)
卷期: Volume 50, issue 24  

页码: 1751-1753

 

ISSN:0003-6951

 

年代: 1987

 

DOI:10.1063/1.97736

 

出版商: AIP

 

数据来源: AIP

 

摘要:

After the EL2 absorption band at 1.2 eV is fully photoquenched [i.e., EL2 defect completely transferred from the normal (EL20) to metastable (EL2*) state] it can be partially recovered by photon excitation. This EL2*→EL20recovery exhibits peaks at 0.80 and 0.90 eV with shoulders at 0.86 and 0.94 eV. Comparison is made to the previously published photon‐induced photoconductivity recovery and the results are used to construct a modified configuration coordinate model for the EL2 defect.

 

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