A new sputtering device using a radio-frequency magnetron discharge with a rectangular hollow-shaped electrode has been developed for a low-pressure discharge (∼ a few mTorr). The spatial structures of the electron density, the etching rate of the target material (copper), and the deposition rate were measured in uniform and convex profiles of the externally applied magnetic field. The device realized the uniform use of the target material under the arrangement of the magnetic-field configuration. The resistivity of the deposited copper thin film was also obtained, which was found to be similar to that of conventional copper(∼10−8 &OHgr; m).©1998 American Institute of Physics.