Electronic effects on dislocation velocities in heavily doped germanium
作者:
J. R. Patel,
L. R. Testardi,
期刊:
Applied Physics Letters
(AIP Available online 1977)
卷期:
Volume 30,
issue 1
页码: 3-5
ISSN:0003-6951
年代: 1977
DOI:10.1063/1.89204
出版商: AIP
数据来源: AIP
摘要:
Based on a model proposed by Frisch and Patel, the dislocation velocity behavior in heavily doped germanium has been analyzed using Fermi‐Dirac statistics. Both the isothermal doping dependence and the temperature dependence of the change in dislocation velocity with doping can be accounted for by assuming an acceptorlike dislocation energy level, somewhat above the center of the energy gap.
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