A method is described for the separation of bulk and surface recombination parameters using experimentally measured photoconductive decay curves. Curve fitting procedures using numerical solutions to the time dependent hole continuity equation permit a unique determination of surface recombination velocities and bulk lifetime. The method is applied to thick and thin films of HgCdTe to determine recombination velocities at several technologically important interfaces. Values of recombination velocity ranged from 300 to 20 000 cm/s depending upon material growth method and surface preparation. Experimentally observed deviations from the assumed model are discussed in terms of a spatially dependent bulk lifetime.