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Ultraviolet photoemission studies of GaAs(100) surfaces chemically stabilized by H2S treatments

 

作者: T. Tiedje,   K. M. Colbow,   D. Rogers,   Z. Fu,   W. Eberhardt,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1989）
卷期: Volume 7, issue 4  

页码: 837-840

 

ISSN:0734-211X

 

年代: 1989

 

DOI:10.1116/1.584610

 

出版商: American Vacuum Society

 

关键词: GALLIUM ARSENIDES;SURFACE PROPERTIES;SURFACE TREATMENTS;ELECTRONIC STRUCTURE;PHOTOEMISSION;PHOTOELECTRON SPECTROSCOPY;SODIUM SULFIDES;AMMONIUM COMPOUNDS;SULFIDES;CHEMICAL REACTIONS;COATINGS;MEDIUM TEMPERATURE;GaAs

 

数据来源: AIP

 

摘要:

We report photoemission studies of GaAs(100) surfaces treated with H2S. Our high‐resolution core level photoemission data show that these surfaces are completely terminated by a GaSxspecies and the treated surface is stable in air or water. Thus a H2S treatment might result in better device quality surfaces and interfaces than the surfaces prepared by recently proposed chemical treatments involving Na2S or (NH4)2S.

 

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