Bi-directional switching based on semiconductor laser/amplifier with shallow-etched bending ridge waveguide
作者:
Ching-Fuh Lin,
Bor-Lin Lee,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 14
页码: 1903-1905
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119977
出版商: AIP
数据来源: AIP
摘要:
A new type of optical switching device is developed. For a semiconductor laser amplifier with a shallow-etched bending ridge waveguide, the laser beam could propagate along the bending direction or the straight direction. Switching between the two directions is characterized. With the device fabricated on the substrate with two quantum wells of different widths, switching characteristics are found to significantly depend on the spectral separation of the two lasing modes. ©1997 American Institute of Physics.
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