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Bi-directional switching based on semiconductor laser/amplifier with shallow-etched bending ridge waveguide

 

作者: Ching-Fuh Lin,   Bor-Lin Lee,  

 

期刊: Applied Physics Letters  (AIP Available online 1997)
卷期: Volume 71, issue 14  

页码: 1903-1905

 

ISSN:0003-6951

 

年代: 1997

 

DOI:10.1063/1.119977

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A new type of optical switching device is developed. For a semiconductor laser amplifier with a shallow-etched bending ridge waveguide, the laser beam could propagate along the bending direction or the straight direction. Switching between the two directions is characterized. With the device fabricated on the substrate with two quantum wells of different widths, switching characteristics are found to significantly depend on the spectral separation of the two lasing modes. ©1997 American Institute of Physics.

 

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