High quality, epitaxial, relaxed GexSi1−xlayers have been grown by rapid thermal processing chemical vapor deposition. Relaxation is believed to be due primarily to the high deposition temperature of 1000 °C and occurred through the formation of an asymmetric misfit dislocation network aligned along the ⟨110⟩ directions and confined to the interface. The only other defects observed were single threading dislocations at the ends of misfit dislocations.