Thermal stresses in square‐patterned GaAs/Si: A finite‐element study
作者:
E. H. Lingunis,
N. M. Haegel,
N. H. Karam,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 59,
issue 26
页码: 3428-3430
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.105697
出版商: AIP
数据来源: AIP
摘要:
The effect of free edges on the thermal stress distribution in square‐patterned GaAs/Si (100) is studied by three‐dimensional finite‐element elastic analysis. The results are discussed in comparison with previous analytical and numerical calculations. Finally the stress in the most important central portion of the square is calculated as a function of width to thickness ratio in the range 1 to 40. Results are presented in a form appropriate for interpretation of 4.2‐K photoluminescence (PL) measurements and device optimization.
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