A nearly pure subsurface layer of an implanted element was created using aluminum implantation into beryllium. In particular, post‐implant annealing of polycrystalline beryllium samples implanted with 200 keV aluminum caused a dramatic increase in the peak aluminum concentration as determined by Rutherford backscattering. The effect was observed for all three doses studied: 0.46, 1.1, and 4.6×1018Al/cm2. For the 1.1×1018Al/cm2case, cross‐sectional transmission electron microscopy of the annealed sample revealed a distinct subsurface layer with the structure of crystalline aluminum. Auger sputter profiles of individual grains showed the layer purity to be as high as 98 at. % aluminum. However, there were indications that the layer formation and/or purity were grain dependent.