Temperature dependence of the threshold current of an InGaAsP laser under 130‐ps electrical pulse pumping
作者:
Pao‐Lo Liu,
J. P. Heritage,
O. E. Martinez,
期刊:
Applied Physics Letters
(AIP Available online 1984)
卷期:
Volume 44,
issue 4
页码: 370-372
ISSN:0003-6951
年代: 1984
DOI:10.1063/1.94772
出版商: AIP
数据来源: AIP
摘要:
We have measured the temperature dependence of the threshold current of an InGaAsP injection laser pumped by 130‐ps electrical pulses. By comparing the data with the empirical ruleIth=I0 exp(T/T0), we have observed aT0of 148 K. The results indicate that we can partially separate carrier depletion processes, e.g., spontaneous radiative, Auger, or other nonradiative recombination, and carrier leakage from the fast stimulated emission process, hence, eliminate their effect on the temperature stability of the threshold current.
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