首页   按字顺浏览 期刊浏览 卷期浏览 Analysis of transients in pulse modulated semiconductor lasers biased near threshold
Analysis of transients in pulse modulated semiconductor lasers biased near threshold

 

作者: A. Mecozzi,   P. Spano,   A. D’Ottavi,   S. Piazzolla,  

 

期刊: Applied Physics Letters  (AIP Available online 1989)
卷期: Volume 55, issue 8  

页码: 769-771

 

ISSN:0003-6951

 

年代: 1989

 

DOI:10.1063/1.101800

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A theory of time jitter in semiconductor lasers initially biased just below threshold is developed. Simulations of the buildup of emitted optical pulses in lasers starting from below or above threshold are also presented which, for initial biasing up to threshold, are in good agreement with the theory. In particular, we show that time jitter does not vary for biasing currents up to about 0.95 of the threshold value, while it suffers a small increase at threshold and a steep decrease for higher biasing currents.

 

点击下载:  PDF (367KB)



返 回