Low‐pressure Cs‐Ba discharge. I. Model development
作者:
James R. Luke,
Mohamed S. El‐Genk,
期刊:
Journal of Applied Physics
(AIP Available online 1995)
卷期:
Volume 78,
issue 6
页码: 3643-3649
ISSN:0021-8979
年代: 1995
DOI:10.1063/1.359941
出版商: AIP
数据来源: AIP
摘要:
A transient model of a low‐pressure Cs‐Ba diode which operates in a collisionless Knudsen mode is developed and benchmarked with experimental measurements. The model couples the external circuit to the plasma discharge in the diode. The model calculates the electron energy, plasma density, densities of ground state and first four excited states of neutral Cs atoms, sheath potentials, Cs coverage on the electrode surfaces, forward voltage drop, and discharge current as functions of time, as well as the current‐voltage (I‐V) characteristic of the diode. Calculated terminal voltage and current characteristics are in good agreement with experimental values. ©1995 American Institute of Physics.
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