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Low‐pressure Cs‐Ba discharge. I. Model development

 

作者: James R. Luke,   Mohamed S. El‐Genk,  

 

期刊: Journal of Applied Physics  (AIP Available online 1995)
卷期: Volume 78, issue 6  

页码: 3643-3649

 

ISSN:0021-8979

 

年代: 1995

 

DOI:10.1063/1.359941

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A transient model of a low‐pressure Cs‐Ba diode which operates in a collisionless Knudsen mode is developed and benchmarked with experimental measurements. The model couples the external circuit to the plasma discharge in the diode. The model calculates the electron energy, plasma density, densities of ground state and first four excited states of neutral Cs atoms, sheath potentials, Cs coverage on the electrode surfaces, forward voltage drop, and discharge current as functions of time, as well as the current‐voltage (I‐V) characteristic of the diode. Calculated terminal voltage and current characteristics are in good agreement with experimental values. ©1995 American Institute of Physics.

 

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