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Density of states in amorphous silicon produced by microwave glow discharge

 

作者: M. Aktik,   J. F. Currie,   A. Yelon,  

 

期刊: Journal of Applied Physics  （AIP Available online 1982）
卷期: Volume 53, issue 1  

页码: 439-441

 

ISSN:0021-8979

 

年代: 1982

 

DOI:10.1063/1.329907

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Capacitance‐voltage characteristics of a metal‐oxide‐amorphous silicon structure are analyzed in order to obtain the density of statesN(E) in microwave glow discharge amorphous silicon films. Our measurement and deconvolution techniques reveal some structure in the density of states profile. At the midgapN(E) is found to be lower than 1017cm−3eV−1.

 

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