The existence of cusps in the interfacial energy against misorientation curve has been studied for Ag/Si(l00) and Ag/Si(111) interfaces using the modified sphere-plate technique. The following preferred orientations were obtained: Ag(100)//Si(100) with Ag[011]//Si[011], and Ag(111)//Si(111) with Ag[110]//Si[114]. These are the same preferred orientation relationships previously found in studies of thin-film growth and appear to be due to low interfacial energies. In addition, preferred orientations Ag(100)//Si(100), Ag(111)//Si(100) and Ag(111)//Si(111) without any preferred directional alignment were observed. These latter orientations are believed to be the result of the native silicon oxide layer present between silver and the silicon single crystals.