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Double‐sided epitaxy of multiquantum well modulator arrays by molecular beam epitaxy

 

作者: E. G. Scott,   M. A. Z. Rejman‐Greene,  

 

期刊: Applied Physics Letters  （AIP Available online 1990）
卷期: Volume 57, issue 16  

页码: 1597-1599

 

ISSN:0003-6951

 

年代: 1990

 

DOI:10.1063/1.103359

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We report, for the first time, the growth of high quality InP/InGaAs multiquantum well modulator arrays onboththe [100] and the [1¯00] faces of the same InP wafer using an indium‐free wafer mounting technique in gas source molecular beam epitaxy.

 

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