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Polymethyl methacrylate resist sensitivity enhancement in x‐ray lithography byinsitupolymerization

 

作者: W.‐T. Liu,   J. C. Corelli,   A. J. Steckl,   J. A. Moore,   J. Silverman,  

 

期刊: Applied Physics Letters  （AIP Available online 1984）
卷期: Volume 44, issue 10  

页码: 973-975

 

ISSN:0003-6951

 

年代: 1984

 

DOI:10.1063/1.94616

 

出版商: AIP

 

数据来源: AIP

 

摘要:

X‐ray‐induced grafting of acrylic acid to poly (methyl methacrylate) (PMMA) increases the resist sensitivity by at least three orders of magnitude. Scanning electron microscopy of grafted PMMA revealed micron and submicron features for dose levels as small as 0.1–1 mJ/cm2, thus demonstrating the possibility of using this technique for x‐ray lithography.

 

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