Thermal donors in silicon-rich SiGe
作者:
E. Hild,
P. Gaworzewski,
M. Franz,
K. Pressel,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 72,
issue 11
页码: 1362-1364
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.121055
出版商: AIP
数据来源: AIP
摘要:
We have investigated thermal donor formation at 450 °C in oxygen-rich SiGe with more than 1&percent; Ge content by Hall measurements and infrared spectroscopy. These measurements prove the presence of double donors in annealed Si-rich SiGe samples. The ionization energies of the donors correspond to those of the thermal double donors in Si, only the formation rate is reduced. Due to alloy effects, we observe only broadbands in the low-temperature infrared absorption spectra in SiGe instead of individual lines of neutral and singly ionized thermal donors in Si. The shift of these absorption bands to lower energies with longer heat treatment and a corresponding decrease of the ionization energy found from Hall measurements indicates the formation of shallower donor species. ©1998 American Institute of Physics.
点击下载:
PDF
(67KB)
返 回