Suppression of oxide growth on porous silicon by treatment with HF vapor
作者:
Chang‐Koo Kim,
Chan‐Hwa Chung,
Sang Heup Moon,
期刊:
Journal of Applied Physics
(AIP Available online 1995)
卷期:
Volume 78,
issue 12
页码: 7392-7394
ISSN:0021-8979
年代: 1995
DOI:10.1063/1.360389
出版商: AIP
数据来源: AIP
摘要:
We have observed by experiment that the oxide growth rate on porous silicon is reduced to a minimum when the surface is treated with a proper amount of HF vapor. Fourier transform infrared spectroscopy and x‐ray photoelectron spectroscopy observations of the treated surface suggest that the oxide growth rate is closely related to the amount of the surface fluorides. ©1995 American Institute of Physics.
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