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Ohmic contacts ton‐GaAs using In/Pd metallization

 

作者: L. H. Allen,   L. S. Hung,   K. L. Kavanagh,   J. R. Phillips,   A. J. Yu,   J. W. Mayer,  

 

期刊: Applied Physics Letters  （AIP Available online 1987）
卷期: Volume 51, issue 5  

页码: 326-327

 

ISSN:0003-6951

 

年代: 1987

 

DOI:10.1063/1.98429

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Ohmic contacts ton‐GaAs (Si doped at 2×1018cm−3) with contact resistances of 0.7–1.5×10−6&OHgr; cm2have been formed with deposited layers of In and Pd. The layers were sequentially evaporated and then annealed at 500 °C for 20 s to form In3Pd and a top layer of In. In addition a thin (≊200 A˚) reacted layer was formed at the GaAs interface. Uniform interface morphology was observed with no evidence of localized reaction.

 

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