首页   按字顺浏览 期刊浏览 卷期浏览 GaAs/AlGaAs quantum-well infrared photodetectors on GaAs-on-Si substrates
GaAs/AlGaAs quantum-well infrared photodetectors on GaAs-on-Si substrates

 

作者: D. K. Sengupta,   W. Fang,   J. I. Malin,   J. Li,   T. Horton,   A. P. Curtis,   K. C. Hsieh,   S. L. Chuang,   H. Chen,   M. Feng,   G. E. Stillman,   L. Li,   H. C. Liu,   K. M. S. V. Bandara,   S. D. Gunapala,   W. I. Wang,  

 

期刊: Applied Physics Letters  （AIP Available online 1997）
卷期: Volume 71, issue 1  

页码: 78-80

 

ISSN:0003-6951

 

年代: 1997

 

DOI:10.1063/1.119473

 

出版商: AIP

 

数据来源: AIP

 

摘要:

In this letter, we describe the characteristics of molecular beam epitaxy GaAs/AlGaAs quantum-well infrared photodetectors (QWIP’s) grown on a GaAs substrate, and on a GaAs-on-Si substrate produced by metalorganic chemical-vapor deposition. Important issues for QWIP applications such as dark current, spectral response, and absolute responsivity are studied. We find that compared to a similar detector structure grown on a GaAs substrate, the detector grown on a GaAs-on-Si substrate exhibits similar dark current and absolute responsivity while displaying a small blueshift in the spectral response. ©1997 American Institute of Physics.

 

点击下载:  PDF (119KB)



返 回