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Application of liftoff low‐temperature‐grown GaAs on transparent substrates for THz signal generation

 

作者: H.‐M. Heiliger,   M. Vossebu¨rger,   H. G. Roskos,   H. Kurz,   R. Hey,   K. Ploog,  

 

期刊: Applied Physics Letters  （AIP Available online 1996）
卷期: Volume 69, issue 19  

页码: 2903-2905

 

ISSN:0003-6951

 

年代: 1996

 

DOI:10.1063/1.117357

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Epitaxial liftoff (ELO) of low‐temperature‐grown GaAs (LT‐GaAs) is employed to fabricate (sub)picosecond photoconductive switches on optically transparent substrates for THz applications. Glass is selected as a substrate for on‐wafer probes while sapphire is chosen for free‐space antennas. ©1996 American Institute of Physics.

 

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