Fluorinated silicon dioxide films have generated much interest as potential low dielectric constant materials for use in back end interconnect technologies in microelectronics manufacturing. A recent article from this group reported on the reliability and stability of fluorinated oxide films. These films were prepared in a conventional parallel plate dual frequency plasma‐enhanced chemical‐vapor deposition reactor. The concentration of the fluorine in the film was varied by changing the deposition parameters. The highest fluorine concentration obtained was 15% in that study. The fluorine included in the film is expected to affect the results obtained during plasma etch of the film. The effect of the incorporated fluorine on the etch rate of the film and microloading and the profile of contact structures are examined.