Arsenic precipitation at dislocations in GaAs substrate material
作者:
A. G. Cullis,
P. D. Augustus,
D. J. Stirland,
期刊:
Journal of Applied Physics
(AIP Available online 1980)
卷期:
Volume 51,
issue 5
页码: 2556-2560
ISSN:0021-8979
年代: 1980
DOI:10.1063/1.327979
出版商: AIP
数据来源: AIP
摘要:
High‐resolution diffraction utilizing an analytical electron microscope has been employed to identify small (∼500 A˚‐diam) precipitates attached to line dislocations in gallium arsenide. The results show that the precipitates consist of crystallites of elemental hexagonal arsenic embedded within the gallium arsenide matrix. Precipitates were observed in a range of semi‐insulating, p‐type, and n‐type material and were not dependent on the presence of specific additional dopants for their occurrence. The way in which the particles may originate is discussed.
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