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Electrical characterization of single barrier GaAs/GaN/GaAs heterostructures

 

作者: X. Huang,   T. S. Cheng,   S. E. Hooper,   T. J. Foster,   L. C. Jenkins,   J. Wang,   C. T. Foxon,   J. W. Orton,   L. Eaves,   P. C. Main,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1995）
卷期: Volume 13, issue 4  

页码: 1582-1584

 

ISSN:1071-1023

 

年代: 1995

 

DOI:10.1116/1.588191

 

出版商: American Vacuum Society

 

关键词: HETEROSTRUCTURES;P−TYPE CONDUCTORS;N−TYPE CONDUCTORS;GALLIUM ARSENIDES;GALLIUM NITRIDES;MOLECULAR BEAM EPITAXY;IV CHARACTERISTIC;ELECTRONIC STRUCTURE;TEMPERATURE DEPENDENCE;TEMPERATURE RANGE 65−273 K;GaAs;GaN

 

数据来源: AIP

 

摘要:

A modified molecular beam epitaxy technique has been used to grow single barrier GaAs/GaN/GaAs heterostructures of bothn‐ andp‐type. The temperature‐dependentI(V) measurements show thermally activated conduction over the barrier above about 200 K. A Type I band alignment is indicated by significant offsets in both the conduction and valence bands at the GaAs/GaN heterointerface.

 

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