Electronic characterization of indium tin oxide/silicon photodiodes
作者:
N. S. Chang,
J. R. Sites,
期刊:
Journal of Applied Physics
(AIP Available online 1978)
卷期:
Volume 49,
issue 9
页码: 4833-4837
ISSN:0021-8979
年代: 1978
DOI:10.1063/1.325513
出版商: AIP
数据来源: AIP
摘要:
Photodiodes of indium tin oxide deposited on single‐crystalp‐silicon are analyzed with respect to their electronic properties. Dark measurements include the current and capacitance dependences on voltage and temperature. Photocurrent measurements reveal the relationship to the illumination intensity, temperature, and wavelength of light. Analysis reveals a relatively large, but temperature‐dependent, built‐in voltage and a small interface recombination probability.
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