Sputter deposition of YBa2Cu3O7−xfilms on Si at 500 °C with conducting metallic oxide as a buffer layer
作者:
Q. X. Jia,
W. A. Anderson,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 57,
issue 3
页码: 304-306
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.104218
出版商: AIP
数据来源: AIP
摘要:
Superconducting YBa2Cu3O7−xthin films were deposited on Si substrates at 500 °C by rf magnetron sputtering from a stoichiometric oxide target. Metallic oxide RuO2, sputtered by reactive dc magnetron, was used as a buffer layer to nucleate the superconducting film and minimize the reactions between Si and superconductor. The as‐deposited thin films, without further post high‐temperature annealing, were completely superconductive at 79 K. Very smooth surface morphology was demonstrated by scanning electron microscopy. X‐ray diffraction data indicated that the films had a randomly oriented polycrystalline structure. Auger electron spectroscopy did not reveal interdiffusion of elements in the three layers.
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