Annealing of phosphorus implanted silicon by incoherent light scanning
作者:
L. Correra,
L. Pedulli,
期刊:
Radiation Effects
(Taylor Available online 1982)
卷期:
Volume 63,
issue 1-4
页码: 187-190
ISSN:0033-7579
年代: 1982
DOI:10.1080/00337578208222838
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
(100) Silicon wafers implanted with 2 × 101531P+/cm2at 100 keV have been annealed using a scanning beam of incoherent light. The main results obtained after annealing are: (a) the carrier concentration profile shows a complete dopant activation without diffusion of the implanted ions; (b) the values of carrier mobility are similar to those obtained by furnace annealing; (c) an improvement of minority carrier diffusion length is often observed; (d) a very good damage recovery is obtained. Transmission Electron Microscopy observations show that the residual damage is confined within a region at 0.2 μm depth and consists of dislocation loops of about 50 Å diameter. It is concluded that this technique can be used to obtain very good annealing of implanted layers.
点击下载:
PDF (555KB)
返 回