Linear in-plane uniaxial stress effects on the device characteristics of AlGaAs/GaAs modulation doped field effect transistors
作者:
A. K. Fung,
L. Cong,
J. D. Albrecht,
M. I. Nathan,
P. P. Ruden,
H. Shtrikman,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 81,
issue 1
页码: 502-505
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.364126
出版商: AIP
数据来源: AIP
摘要:
The current voltage relationships of AlGaAs/GaAs modulation doped field effect transistors (MODFETs) were measured as a function of applied uniaxial stress. Stresses in the [110] and [11¯0] directions on MODFETs that were grown on a (001) substrate produced threshold shifts of opposite sign. Stresses in [110] and [11¯0] directions resulted in threshold voltage pressure coefficients of −15 and 64 mV/Kbar, respectively. The asymmetric shifts in the threshold voltages are attributed to piezoelectric effects. In addition, stress induced changes in the slopes of the transconductance versus gate-to-source voltage relationships were also measured. For stresses in the [110] and [11¯0] directions, the dependencies were 0.4 and −0.7 mS/(VKbar), respectively.©1997 American Institute of Physics.
点击下载:
PDF
(71KB)
返 回