Reactive ion etching of GaAs and AlGaAs in a BCl3–Ar discharge
作者:
S. S. Cooperman,
H. K. Choi,
H. H. Sawin,
D. F. Kolesar,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena
(AIP Available online 1989)
卷期:
Volume 7,
issue 1
页码: 41-46
ISSN:0734-211X
年代: 1989
DOI:10.1116/1.584443
出版商: American Vacuum Society
关键词: ETCHING;GALLIUM ARSENIDES;ALUMINIUM ARSENIDES;BORON CHLORIDES;ARGON;ELECTRIC DISCHARGES;SURFACE REACTIONS;GLOW DISCHARGES;ANISOTROPY;ION COLLISIONS;COLLISIONS;MOLECULAR IONS;CHLORINE;GaAs;(Al,Ga)As
数据来源: AIP
摘要:
Reactive ion etching of GaAs and AlGaAs has been performed in a BCl3–Ar discharge. Etching properties have been studied as functions of BCl3percentage (0%–100%), total pressure (2.5–30.0 mTorr), and power density (0.06–0.22 W/cm2). At low pressures (2.5–12.5 mTorr) and intermediate BCl3percentages (25%–75%), profiles exhibiting a high degree of anisotropy are achieved. Under anisotropic conditions, etch rates are about 0.05–0.1 μm/min (at power density of 0.22 W/cm2), somewhat lower than for other chlorine‐containing gases. Conditions for etching GaAs and AlGaAs at equal rates have been determined. There is a small lag time between ignition of the glow discharge and the start of etching. The relative concentration of Cl atoms in the plasma, as measured by optical emission actinometry, correlates well with the etch rate for various operating parameters.
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