Study of the moving species in ion‐induced reactions
作者:
K. Tao,
C. A. Hewett,
S. S. Lau,
Ch. Buchal,
D. B. Poker,
期刊:
Applied Physics Letters
(AIP Available online 1987)
卷期:
Volume 50,
issue 19
页码: 1343-1345
ISSN:0003-6951
年代: 1987
DOI:10.1063/1.97901
出版商: AIP
数据来源: AIP
摘要:
We present evidence in this study that the moving species under ion mixing conditions are affected by the implantation damage distribution in the sample. This observation holds for metal‐semiconductor, metal‐metal, and semiconductor‐semiconductor systems. The direction of thermal annealing atomic transport appears to play a role in ion mixing as well. When these two factors are in the same direction, only one dominant moving species is observed. When these two factors are in opposite directions, both constituents can contribute to the atomic transport in ion mixing.
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