Deep level transient spectroscopy, by means of capacitance transients, is applied to characterize deep carrier traps located in the depleted zone of a rectifying Te‐Se‐Cd structure. Preliminary observations, such as electron beam induced current and secondary electron and x‐ray emission, show that the depleted region is situated in thep‐type epitaxially grown Se film. Measurements of the thermal emission rate of trapped carriers are made in the 80–340 °K temperature range. From these, the existence of three deep hole traps in Se is demonstrated with the following values of the thermal activation energyET, capture cross section &sgr;e, and volume densityNT: 290 meV, 1.2×10−16cm2, 7.0×1013cm−3; 400 meV, 2.5×10−15cm2, 3.0×1013cm−3; 700 meV, 1.5×10−14cm2, 3.0×1014cm−3. The frequency dependence of the differential capacitance is measured between 100 Hz and 1 MHz and is attributed to a shallow hole trap (ET∼100 meV), with a high volume density in the 1019–1020cm−3range. This last result agrees with the conclusions deduced from thermally stimulated currents (TSC) experiments on the same type of material.