Thin films of CoAs from low‐temperature metalorganic chemical vapor deposition of a novel single‐source precursor compound
作者:
Franz‐Robert Klingan,
Alexander Miehr,
Roland A. Fischer,
Wolfgang A. Herrmann,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 67,
issue 6
页码: 822-824
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.115455
出版商: AIP
数据来源: AIP
摘要:
A new structurally defined precursor compound for the low‐temperature metalorganic chemical vapor deposition (MOCVD) of CoAs thin films is reported. The easily accessible 1,3‐bis(tert‐butyl)‐2‐[tetracarbonyl‐cobalt(‐l)]‐1,3,2‐diazarsolidine was decomposed by hot‐wall low pressure CVD. Thin films of cobalt arsenide with retention of the stoichiometry of the precursor (Co:As=1/1) were formed at temperatures as low as 210 °C. Electron micrographs show uniform films, energy dispersive x‐ray spectroscopy, and Auger electron spectroscopy confirm their bulk composition, and powder diffraction patterns and conductivity measurements prove their crystallinity and electrical properties. ©1995 American Institute of Physics.
点击下载:
PDF
(200KB)
返 回