Ultrathin silicon membranes to study supercurrent transport in crystalline semiconductors
作者:
W. M. van Huffelen,
M. J. de Boer,
T. M. Klapwijk,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 58,
issue 21
页码: 2438-2440
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.104866
出版商: AIP
数据来源: AIP
摘要:
We have developed a two‐step anisotropic etching process to fabricate thin silicon membranes, used to study supercurrent transport in semiconductor coupled weak links. The process uses a shallow BF+2implantation, and permits easy control of membrane thickness ≤100 nm. Preliminary measurements on membrane‐based Nb‐Si‐Nb junctions reveal the simultaneous occurrence of tunnel behavior and Josephson coupling.
点击下载:
PDF
(370KB)
返 回