Hydrogenation effect in ann‐channel metal‐oxide‐semiconductor field‐effect transistor
作者:
Choong Hun Lee,
Choochon Lee,
K. J. Chang,
Sung Chul Kim,
Jin Jang,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 58,
issue 2
页码: 134-136
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.104951
出版商: AIP
数据来源: AIP
摘要:
The effects of hydrogen plasma exposure on the characteristics of ann‐channel metal‐oxide‐semiconductor field‐effect transitor are studied. The helium plasma gives almost no changes in maximum transonductance and subthreshold slope whereas the hydrogen plasma degrades maximum transconductance and increases subthreshold slope. These results indicate that the excess interface traps are generated by hydrogenation, which is also confirmed by quasi‐static capacitance‐voltage analysis.
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