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Displacements parallel to the surface of reconstructed GaAs(110)

 

作者: C. B. Duke,   A. Paton,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  (AIP Available online 1984)
卷期: Volume 2, issue 3  

页码: 327-331

 

ISSN:0734-211X

 

年代: 1984

 

DOI:10.1116/1.582818

 

出版商: American Vacuum Society

 

关键词: ELECTRON DIFFRACTION;SURFACE STRUCTURE;DISPLACEMENTS;GALLIUM ARSENIDES;BOND LENGTHS;CRYSTAL STRUCTURE;GaAs

 

数据来源: AIP

 

摘要:

Analysis of measured elastic low energy electron diffraction (ELEED) intensities from GaAs(110) reveals that the relaxations parallel to the surface associated with a ω1=29° bond‐length‐conserving rotated surface structure can be reduced by 75% without substantially affecting the quality of the model description of these intensities. Optimizing the surface geometry while constraining the atomic displacements parallel to the surface to be zero, however, leads to a significantly inferior description of these data. A model embodying greatly reduced but nonzero parallel displacements is compatible both with the ELEED intensities and with recent ion channeling data.

 

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